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| triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 1 ku band, 2 watt power amplifier TGA2510 key features and performance ? 34 dbm midband psat ? 26 db nominal gain ? 7 db typical input return loss ? 12 db typical output return loss ? 12.5 - 17 ghz frequency range ? directional power detector with reference ? 0.25m phemt 3mi technology ? bias conditions: 7.5v, 650ma ? chip dimensions: 2.02 x 1.38 x 0.10 mm (0.080 x 0.054 x 0.004 inches) preliminary measured performance bias conditions: vd=7.5v id=650ma primary applications ? vsat ? point to point note: datasheet is subject to change without notice.
triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 2 TGA2510 table i absolute maximum ratings symbol parameter value notes v d drain voltage 8 v 1 / 2 / v g gate voltage range -5v to 0v 1 / i d drain supply current 1300 ma 1 / 2 / | i g | gate supply current 18 ma 1 / p in input continuous wave power 24 dbm 1 / 2 / p d power dissipation 10.4 w 1 / 2 / t ch operating channel temperature 200 0 c 3 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1 / these ratings represent the maximum operable values for this device 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d at a package base temperature of 70 c 3 / junction operating temperature will directly affect the device median lifetime. for maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. table ii recommended operating conditions symbol parameter value vd drain voltage 7.5 v id drain current 650 ma id_drive drain current under rf drive 1200 ma vg3, vg4 gate voltage -0.65 v typical triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 3 table iii rf characterization table (t a = 25 c, nominal) (vd = 7.5v, idq = 650ma 5%) symbol parameter test conditions typ units notes gain small signal gain f = 12.5 ? 17 ghz 26 db irl input return loss f = 12.5 ? 17 ghz 7 db orl output return loss f = 12.5 ? 17 ghz 12 db pwr output power @ pin = +15dbm f = 12.5 ? 17 ghz 34.0 dbm pae power added efficiency @ pin=+15dbm f = 12.5 ? 17 ghz 31 % table iv thermal information parameter test conditions t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to backside of carrier) v d = 7.5v i d = 650ma p diss = 4.88w t base = 70 c 130.7 12.44 5.5e+6 note: assumes eutectic attach using 1.5mil 80/20 ausn mounted to a 20mil cumo carrier at 70 c baseplate temperature. worst case conditions with no rf applied, 100% of dc power is dissipated. TGA2510 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 4 typical fixtured performance idq=650ma TGA2510 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 5 typical fixtured performance idq=650ma TGA2510 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 6 typical fixtured performance idq=650ma TGA2510 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 7 typical fixtured performance idq=650ma TGA2510 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 8 mechanical drawing TGA2510 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 9 40k 40k +5v vdet vref 50 rf out dut 5pf chip external power detector TGA2510 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 10 chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 100pf vg input tfn output tfn 100pf vd off chip r=10 off chip c=0.1 f off chip r=10 off chip c=0.1 f TGA2510 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info -mmw@tqs.com web: www.triquint.com product data sheet december 3, 2009 11 gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c. assembly process notes TGA2510 |
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